1T308V (GT308V) Transistors germanium diffusion-alloy PnP universal design.

Designed for use in generators, power amplifiers, switching devices.

Available in metal glass housing with flexible terminals.

Main technical characteristics of the transistor 1Т308V  :

* Structure: PNP

* RC Max - constant power dissipation collector: 150 mW;

• Fгр - current Limit gain frequency of the transistor circuits for common-emitter and common-base: not less than 120 MHz;

• Ikbo - breakdown Voltage collector-base for a given reverse collector current and open-circuit emitter: 20;

• Uэбо - breakdown Voltage emitter-base for a given reverse current of the emitter and collector open circuit: 3;

• IK max - maximum permissible DC collector current: 50 m;

* Ikbo-collector Reverse current-collector current through the junction for a given collector-base reverse voltage and open emitter output: less than 5µa;

* H21e-Static current transfer coefficient for common-emitter circuit in large-signal mode: 80 ... 150 (1V; 10 mA);

* SC-header transfer capacity: not more than 8 (5V);