Material of transistor: Ge

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.12

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 15

Maximum emitter-base voltage |Ueb|, V: 20

Maximum collector current |Ic max|, A: 0.2

Maximum temperature (Tj), °C: 85

Transition frequency (ft), MHz: 2

Collector capacitance (Cc), pF: 30

Forward current transfer ratio (hFE), min: 20

Package of 2N585 transistor: TO5