5 x 2N5322

Bipolar (BJT) Single Transistor, General Purpose, PNP, 75 V, 2 A, 10 W, TO-39, Through Hole

 A medium power Bipolar Transistor features high performance, low frequency devices typically with current ratings 1A up to 1W power dissipation. Designed for use in medium power amplifier and switching applications.

• Silicon power switching transistor
• Turn-on time of 100ns
• Turn-off time of 1000ns
• 175°C/W Junction-to-ambient thermal resistance
• 17.5°C/W Junction to case resistance