Autore: Alaa Jabbar Ghazai,Haslan Abo Hassan,Z. Hassan
Formato: Copertina flessibile
Pagine: 212
Data Pubblicazione: 2013-02-26
Edizione: 1
Lingua: English
Descrizione:
The objective of this book is to characterize the optoelectronic properties of quaternary nAl0.08In0.08Ga0.84N thin films grown via plasma assistance molecular beam epitaxy on sapphire (Al2O3) and silicon (Si) substrates for different optoelectronic applications, including Al0.08In0.08Ga0.84N (MSM) photodetectors (PDs), solar cells and multiquantum well (MQW) laser diodes (LDs). Defectfree films with high structural, optical and electrical qualities were obtained. Xray diffraction analysis was used to characterize small full width at half maximum intensity of diffraction peaks, low compressive strain, relatively large grain size and low dislocation density which produced smooth surfaces without any phases separation or cracks. Scanning electron microscopy, energydispersive Xray microscopy and atomic force microscopy images confirmed these characterizations. Furthermore, high optical quality, as well as high absorption and absorption coefficients were observed using PL and UVVIS spectroscopy. Finally, the simulation of Al0.08In0.08Ga0.84N MQW LD using ISE TCAD software was designed and optimized. The best performance of the LDs was achieved at a quantum well number of 4.