Semiconductor Quantum Dots for Photonic Modulators

Semiconductor Quantum Dots for Photonic Modulators

Andrew Ngo Chun Yong

Autore: Andrew Ngo Chun Yong
Formato: Copertina flessibile
Pagine: 212
Data Pubblicazione: 2014-02-13
Edizione: 1
Lingua: English

Descrizione:
The demand of bandwidth capacity has increased exponentially in recent years due to the rise of highspeed Internet. For lowcost Metropolitan Area Network (WAN), operating wavelength at 1.3 m is chosen due to its low dispersive nature in the silica optical fibers, thus avoiding the need for costly dispersion compensators. Quantum dots (QDs), a selfassembly of coherently strained and defectfree threedimensional nanoislands, are deemed as the new generation of active material. This is because one can expect better device performances due to the deltalike carrier density of states associated with the threedimensional (3D) confinement. The most promising QD material system for 1.3 m operation is that of InAs QDs. This book, therefore, report the study of InAs QDs for 1.3 m electroabsorption modulators. In particular, it provides the theoretical calculations, epitaxial growth, devices fabrication and performances characterization. The materials and knowledge covered in this book are especially useful to professionals in the optoelectronics fields, and researchers who are considering the use of QD systems for optoelectronic devices.