10pcs IRF510N IRF510 Power MOSFET N-Channel Transistor 5.6A 100V IRF510PBF TO-220

Ships From from USA in anti-ESD packing with tracking


IRF510 Description

IRF510 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

The IRF510 is a high-speed N-Channel power MOSFET with an output load capability of up to 5.6A and load voltage up to 100V. The IRF510 power MOSFET is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. The IRF510 can be operated directly from integrated circuits.

IRF510 Features

  • Package Type: TO-220

  • Transistor Type: N Channel

  • Max Voltage Applied From Drain to Source: 100 V

  • Max Gate to Source Voltage: ±20 V

  • Max Continues Drain Current: 5.6 A

  • Max Pulsed Drain Current: 20 A

  • Max Power Dissipation: 43 W

  • Minimum Voltage Required to Conduct: 2 V to 4 V

  • Max Storage & Operating temperature: -55 to +170 Celsius


IRF510 Advantages


Where to use IRF510

The IRF510 can be used in normal and high-speed applications such as DC to DC converters, UPS, power supplies, etc. It can drive high-power relays switches with very low power. And it can be used to drive high-power transistors or any application that requires speed switching with low gate power. What's more, due to its low gate power requirements, it can be operated directly from ICs, microcontrollers, and many electronic platforms such as Arduino, raspberry pi, etc. Other than that, it can also be used to build high-power audio amplifier circuits or be used as a separate amplifier to drive speakers.


IRF510 Applications