Hynix 2x4GB (8GB Total) PC2-5300F-555-11 ECC (model HYMP151F72CP8D5-Y5)

Datasheet: https://pdf1.alldatasheet.com/datasheet-pdf/view/332772/HYNIX/HYMP151F72CP8D5-Y5.html

This memory is used and in perfectly working condition.

It has been fully tested with multiple passes of MemTest86 V4. Please see memory report below.

It comes from a smoke free and pet free home. 

You'll receive the exact memory shown so please check the pictures for more information. 

The memory will be placed in an antistatic bag and safely packaged prior to shipping to protect it during transit.

Standard shipping in the USA is free and includes a tracking number.

Please check my feedback and bid with confidence 

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Physical & Logical Attributes

Fundamental Memory Class:	DDR2 SDRAM FB-DIMM
Module Speed Grade:	DDR2-667D
Module Capacity:	4096 MB
Module Thickness (mm):	8.0 < x <= 9.0
Module Height (mm):	30 < x <= 35
Module Type:	FB-DIMM (133.35 mm)
Number of DIMM Ranks:	4
Number of Column Addresses:	10 bits
Number of Row Addresses:	14 bits
Number of Bank Addresses:	3 bit (8 banks)
DRAM Device Width:	8 bit
Calculated DRAM Capacity:	1 Gb
DRAM Density:	1 Gb
Number of DRAM components:	36
DRAM Page Size:	1 KB
Channel Interface Power Supply:	1.5 V
DRAM Interface Power Supply:	1.8 V

DRAM Timing Parameters

Fine Timebase Divisor:	1 ps
Fine Timebase Dividend:	2 ps
Medium Timebase Dividend:	1 ns
Medium Timebase Divisor:	4 ns
Minimum Clock Cycle Time (tCK min):	3.00 ns (333.33 MHz)
Maximum Clock Cycle Time (tCK max):	8.00 ns (125.00 MHz)
Minimum CAS# Latency Time (tAA min):	15.00 ns
Burst Lengths Supported:	4, 8
CAS# Latencies Supported (tCL):	4T, 5T
Minimum RAS# to CAS# Delay Time (tRCD):	15.00 ns
Minimum Row Active to Row Active Delay (tRRD):	7.50 ns
Minimum Row Precharge Delay Time (tRP):	15.00 ns
Minimum Active to Precharge Delay Time (tRAS):	45.00 ns
Minimum Act to Act/Refresh Delay Time (tRC):	60.00 ns
Minimum Refresh Recovery Delay Time (tRFC):	127.50 ns
Minimum Write Recovery Time (tWR):	16.50 ns
Write Recovery Times Supported:	2T, 3T, 4T, 5T
Write Latencies Supported:	2T, 3T, 4T, 5T
Additive Latencies Supported:	0T, 1T, 2T, 3T
Minimum Write to Read Command Delay (tWTR):	7.50 ns
Minimum Read to Precharge Command Delay (tRTP):	7.50 ns
Average Refresh Interval (tREFI):	7.80 ns
Rank Read-to-Read additional clocks:	0T
Write-to-Read additional clocks:	0T
Read-to-Write additional clocks:	1T
Terminations Supported (150/75/50Ohm):	Yes, Yes, Yes
Rank 0 ODT Definition:	150 Ohm
Rank 1 ODT Definition:	150 Ohm
Weak Driver:	Supported

Thermal Parameters

DRAM Case Temperature Rise from Ambient
DT0: due to Activate-Precharge	6.30 °C
DT2N/DT2Q: due to Precharge/Quiet Standby	4.00 °C
DT2P: due to Precharge Power-Down	1.320 °C
DT3N: due to Active Standby	6.60 °C
DT4R/DT4R4W: due to Page Open Burst Read	20.00 °C
DT5B: due to Burst Refresh	23.00 °C
DT7: due to Bank Interleave Reads with Auto-Precharge	24.00 °C
AMB Case Temperature Rise from Ambient
DT AMB Idle_0: due to AMB in Idle_0 State	58.0 °C
DT AMB Idle_1: due to AMB in Idle_1 State	71.0 °C
DT AMB Idle_2: due to AMB in Idle_2 State	58.0 °C
DT AMB Active_1: due to AMB in Active_1 State	95.0 °C
DT AMB Active_2: due to AMB in Active_2 State	79.0 °C
DT AMB L0s: due to AMB in L0s State	Not supported
Thermal Resistance
Psi[T-A DRAM]: DRAM Package from Top (Case) to Ambient	69.5 °C/W
Psi[T-A AMB]: AMB Package from Top (Junction) to Ambient	21.0 °C/W
Maximum Temperatures
DRAM Case Temperature Maximum	95 °C
AMB Junction Temperature Maximum	125 °C
Thermal Requirements
DT4R4W Delta	Not supported
DRAM High Temperature Self-Refresh Entry	Supported
Double Refresh Rate at DRAM TCaseMax > 85°C	Required

SPD Protocol

SPD Revision:	1.1
SPD Bytes Total:	256
SPD Bytes Used:	176
SPD Checksum:	D76Ch (OK)
CRC covers bytes:	0-116

Part number details

Classification:	DDR2 SDRAM
Module Type:	240-pin FB-DIMM with Heat Spreader
Module Speed:	DDR2-667 5-5-5
Module Revision:	Undefined
Component Density:	1Gb DDR2 SDRAM 8K Ref./8 Banks
Component Configuration:	x8 based
Memory Depth:	512Mb
Data Width:	72-bit
Die Generation:	4th
Package Type:	FBGA Single Die
Package Material:	Lead Free
AMB Vendor & Revision:	IDT, Rev.5
Power Consumption:	Normal

Frequency	CAS	RCD	RP	RAS	RC	RFC	RRD	WR	WTR	RTP
333 MHz	5	5	5	15	20	43	3	6	3	3
267 MHz	4	4	4	12	16	34	2	5	2	2

Module Manufacturer:	Hynix
Module Part Number:	HYMP151F72CP8D5-Y5
DRAM Manufacturer:	Hynix
DRAM Components:	HY5PS1G831CFP-Y5
DRAM Die Revision / Process Node:	C / 66 nm
AMB Manufacturer:	Trident Microsystems
Module Manufacturing Date:	Week 15, 2009
Manufacturing Date Decoded:	April 6-10, 2009
Module Serial Number:	1D40392Fh
Module Manufacturing Location:	Ichon, Korea
Module PCB Revision:	00h