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FQPF30N06L N-channel MOSFET, 22 A, 60 V QFET, TO-220F –Ref:657
1 x piece
– ref 657
Fairchild Semiconductor’s new QFET® planar
MOSFETs use advanced, proprietary technology to offer best-in-class operating
performance for a wide range of applications, including power supplies, PFC
(Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP),
lighting ballasts, and motion control.
They offer reduced on-state loss by lowering
on-resistance (RDS(on)), and reduced switching loss by lowering gate charge
(Qg) and output capacitance (Coss). By using advanced QFET® process technology,
Fairchild can offer an improved figure of merit (FOM) over competing planar
MOSFET devices.
|
Channel Type |
N |
|
Maximum Continuous Drain Current |
22 A |
|
Maximum Drain Source Voltage |
60 V |
|
Maximum Drain Source Resistance |
45 mΩ |
|
Minimum Gate Threshold Voltage |
1V |
|
Maximum Gate Source Voltage |
-20 V, +20 V |
|
Package Type |
TO-220F |
|
Mounting Type |
Through Hole |
|
Transistor Configuration |
Single |
|
Pin Count |
3 |
|
Channel Mode |
Enhancement |
|
Category |
Power MOSFET |
|
Maximum Power Dissipation |
38 W |
|
Minimum Operating Temperature |
-55 °C |
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