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Listing is for one piece - IRFP3206 IRFP3206PbF HexFET N-channel
Type Designator: IRFP3206
Marking Code: IRFP3206
HEXFET: N-Channel
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Absolute Maximum Ratings
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 200 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 140 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 120 A
IDM Pulsed Drain Current 840A
PD @TC = 25°C Maximum Power Dissipation 280 W
Linear Derating Factor 1.9 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery 5.0 V/ns
TJ Operating Junction and TSTG Storage Temperature Range -55 to +175 °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300 °C
Package: TO247
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Some specialist and hard to find components listed