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Listing is for one piece IRFP3206 IRFP3206PbF HexFET  N-channel


Type Designator: IRFP3206


Marking Code: IRFP3206


HEXFET: N-Channel


Applications

High Efficiency Synchronous Rectification in SMPS

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits


Benefits

Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

Lead-Free


Absolute Maximum Ratings

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)        200 A

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)      140 A

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 120 A

IDM Pulsed Drain Current    840A

PD @TC = 25°C Maximum Power Dissipation            280 W

Linear Derating Factor                          1.9 W/°C

VGS Gate-to-Source Voltage               ± 20 V

dv/dt Peak Diode Recovery                   5.0 V/ns

TJ Operating Junction and TSTG Storage Temperature Range      -55 to +175 °C

Soldering Temperature, for 10 seconds (1.6mm from case)                       300 °C

Package:    TO247




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