Autore: Arindam Biswas,Arzoo Rafique,Anup Kumar Bhattacharjee
Formato: Copertina flessibile
Pagine: 84
Data Pubblicazione: 2013-06-01
Edizione: 1
Lingua: English
Descrizione:
This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1?m is added to a conventional nMOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1?m in LDMOS improves the performance of the device in terms of breakdownvoltage and switchingspeed over the conventional MOSFET.