| Module Manufacturer: | Micron Technology |
| Module Part Number: | 72HTS1G72FZ667H1D6 |
| DRAM Manufacturer: | Micron Technology |
| DRAM Components: | Not determined |
| DRAM Die Revision / Process Node: | H / 50 nm |
| AMB Manufacturer: | Trident Microsystems |
| Module Manufacturing Date: | Week 26, 2012 |
| Manufacturing Date Decoded: | June 25-29, 2012 |
| Module Serial Number: | DD9F9208h |
| Module Manufacturing Location: | Singapore (SING) |
| Module PCB Revision: | 1 |
| Fundamental Memory Class: | DDR2 SDRAM FB-DIMM |
| Module Speed Grade: | DDR2-667D |
| Module Capacity: | 8192 MB |
| Module Thickness (mm): | 7.0 < x <= 8.0 |
| Module Height (mm): | 30 < x <= 35 |
| Module Type: | FB-DIMM (133.35 mm) |
| Number of DIMM Ranks: | 4 |
| Number of Column Addresses: | 11 bits |
| Number of Row Addresses: | 14 bits |
| Number of Bank Addresses: | 3 bit (8 banks) |
| DRAM Device Width: | 4 bit |
| Calculated DRAM Capacity: | 1 Gb |
| DRAM Density: | 1 Gb |
| Number of DRAM components: | 64 |
| DRAM Page Size: | 1 KB |
| Channel Interface Power Supply: | 1.5 V |
| DRAM Interface Power Supply: | 1.8 V |
| Fine Timebase Divisor: | 1 ps |
| Fine Timebase Dividend: | 5 ps |
| Medium Timebase Dividend: | 1 ns |
| Medium Timebase Divisor: | 4 ns |
| Minimum Clock Cycle Time (tCK min): | 3.00 ns (333.33 MHz) |
| Maximum Clock Cycle Time (tCK max): | 8.00 ns (125.00 MHz) |
| Minimum CAS# Latency Time (tAA min): | 15.00 ns |
| Burst Lengths Supported: | 4, 8 |
| CAS# Latencies Supported (tCL): | 3T, 4T, 5T |
| Minimum RAS# to CAS# Delay Time (tRCD): | 15.00 ns |
| Minimum Row Active to Row Active Delay (tRRD): | 7.50 ns |
| Minimum Row Precharge Delay Time (tRP): | 15.00 ns |
| Minimum Active to Precharge Delay Time (tRAS): | 45.00 ns |
| Minimum Act to Act/Refresh Delay Time (tRC): | 55.00 ns |
| Minimum Refresh Recovery Delay Time (tRFC): | 127.50 ns |
| Minimum Write Recovery Time (tWR): | 16.50 ns |
| Write Recovery Times Supported: | 2T, 3T, 4T, 5T |
| Write Latencies Supported: | 2T, 3T, 4T, 5T, 6T, 7T, 8T, 9T |
| Additive Latencies Supported: | 0T, 1T, 2T, 3T, 4T, 5T |
| Minimum Write to Read Command Delay (tWTR): | 7.50 ns |
| Minimum Read to Precharge Command Delay (tRTP): | 7.50 ns |
| Average Refresh Interval (tREFI): | 7.80 ns |
| Rank Read-to-Read additional clocks: | 0T |
| Write-to-Read additional clocks: | 0T |
| Read-to-Write additional clocks: | 1T |
| Terminations Supported (150/75/50Ohm): | Yes, Yes, Yes |
| Rank 0 ODT Definition: | 150 Ohm |
| Rank 1 ODT Definition: | 150 Ohm |
| Weak Driver: | Supported |
| DRAM Case Temperature Rise from Ambient | |
| DT0: due to Activate-Precharge | 0.30 °C |
| DT2N/DT2Q: due to Precharge/Quiet Standby | 1.50 °C |
| DT2P: due to Precharge Power-Down | 0.150 °C |
| DT3N: due to Active Standby | 1.65 °C |
| DT4R/DT4R4W: due to Page Open Burst Read | 4.80 °C |
| DT5B: due to Burst Refresh | 9.00 °C |
| DT7: due to Bank Interleave Reads with Auto-Precharge | 10.50 °C |
| AMB Case Temperature Rise from Ambient | |
| DT AMB Idle_0: due to AMB in Idle_0 State | 58.0 °C |
| DT AMB Idle_1: due to AMB in Idle_1 State | 71.0 °C |
| DT AMB Idle_2: due to AMB in Idle_2 State | 58.0 °C |
| DT AMB Active_1: due to AMB in Active_1 State | 95.0 °C |
| DT AMB Active_2: due to AMB in Active_2 State | 79.0 °C |
| DT AMB L0s: due to AMB in L0s State | Not supported |
| Thermal Resistance | |
| Psi[T-A DRAM]: DRAM Package from Top (Case) to Ambient | 24.5 °C/W |
| Psi[T-A AMB]: AMB Package from Top (Junction) to Ambient | 21.0 °C/W |
| Maximum Temperatures | |
| DRAM Case Temperature Maximum | 95 °C |
| AMB Junction Temperature Maximum | 125 °C |
| Thermal Requirements | |
| DT4R4W Delta | 0.40 °C |
| DRAM High Temperature Self-Refresh Entry | Supported |
| Double Refresh Rate at DRAM TCaseMax > 85°C | Required |
| SPD Revision: | 1.2 |
| SPD Bytes Total: | 256 |
| SPD Bytes Used: | 176 |
| SPD Checksum: | 6865h (OK) |
| CRC covers bytes: | 0-116 |
| Classification: | DDR2 FB-DIMM |
| Module Type: | FB-DIMM |
| Module Speed: | DDR2-667 5-5-5 |
| Die Revision: | H |
| PCB Revision: | 1 |
| Package Type: | DDP |
| Frequency | CAS | RCD | RP | RAS | RC | RFC | RRD | WR | WTR | RTP |
|---|---|---|---|---|---|---|---|---|---|---|
| 333 MHz | 5 | 5 | 5 | 15 | 19 | 43 | 3 | 6 | 3 | 3 |
| 267 MHz | 4 | 4 | 4 | 12 | 15 | 34 | 2 | 5 | 2 | 2 |
| 200 MHz | 3 | 3 | 3 | 9 | 11 | 26 | 2 | 4 | 2 | 2 |