Lot of 1000 pcs
The low-power
high-frequency silicon bipolar transistor transistor n-p-n structure of low
power, production of Soviet times. It is widely used in consumer equipment.
Specifications: КT315A
Material of transistor:
Si
Polarity: NPN
Maximum collector power
dissipation (Pc), W: 0.15
Maximum collector-base
voltage |Ucb|, V:
Maximum
collector-emitter voltage |Uce|, V: 25
Maximum emitter-base
voltage |Ueb|, V: 6
Maximum collector
current |Ic max|, mA: 100
Maksimalna temperatura
(Tj), °C: 100
Transition frequency
(ft), MHz: 250
Collector capacitance
(Cc), pF: 7
Forward current
transfer ratio (hFE), min: 30...120
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