Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 580 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 94 A
Total Gate Charge (Qg): 180 nC
Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm
Package: TO247