LOT OF 2: HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. New and Original IR (International Rectifier) This device is a Robust device which can be used for Variety of applications where high speed switching and high current is the requirement.
*Advanced Process Technology
*Ultra Low On-Resistance
*Dynamic dv/dt Rating
*1750C Operating Temperature
*Fast Switching
*Fully Avalanche Rated
New and Original IR (International Rectifier)
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