Typ                   IRF9Z34N

Gehäuse          TO-220

Hersteller          Infineon Technologies

Herst.-Abk.        INF

Ausführung       P-Kanal

I(d)                    19 A

U                      55 V

Leistung (max) P(TOT)                 3.8 W

R(DS)(on)                                      100 mΩ

R(DS)(on) Referenz-Strom            10 A

R(DS)(on) Referenz-Spannung     10 V

U(GS)(th) max.                               4 V

U(GS)(th) Referenz-Strom max.     250 µA

Q(G)                                                35 nC

Q(G) Referenz-Spannung              10 V

C(ISS)                                             620 pF

C(ISS) Referenz-Spannung            25 V

Betriebstemperatur (min.)              -55 °C

Montageart                                    Oberflächenmontage

Serie                                              HEXFET®

Betriebstemperatur (max.)            +175 °C

Transistor-Merkmal                      Standard

U(DSS)                                         55 V

Kanäle                                          1

Inhalt                                            1 St.

Produkt-Art                                  MOSFET