These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.

Features:

• Ultra Low On-Resistance
  
• N-Channel MOSFET
• SOT-23 Footprint
• Low Profile (<1.1mm)
  
• Available in Tape and Reel
  
• Fast Switching
• Lead-Free

Menge: 10 Stück
Artikelnummer: 855705
Artikelbezeichnung: IRLML2502PBF
Gehäuse: SOT-23
Technische Daten: N-LogL 20V 4,2A 1,25W 0,045R SOT23
Funktion: HEXFET® Power MOSFET Transistor
Hersteller: International Rectifier
Zustand: neu, ungebraucht aus aktueller Produktion