Description

. Displaying the results to a 128x64 graphic LCD-Display. Shutdown current is only about 20nA. Operates with microcontrollers. Automatic detection of NPN and PNP bipolar transistors, N- and P-Channel MOSFETs, JFETs, diodes, double diodes, Thyristors and Triacs. One key with automatic power shutdown. Automatic detection of pin layout of the detected part

Feature

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- Up to two Resistors are measured and shown with symbols and values to four decimal digits in the right dimension. All symbols are surrounded by the probe numbers of the Tester (1-3). So Potentiometer can also be measured.
- Testing time is about two seconds, only capacity or inductance measurement can cause longer period.
- Capacitors with value below 25pF are not detectet, but can be measured together with a parallel diode or a parallel capacitor with at least 25pF. In this case you must subtract the capacity value of the parallel connected part.
- Resolution of resistor measurement is now up to 0.01ohms, values up to 50M ohms are detected.
- Can start a separate capacitance and ESR menu functions, ranges 2UuF-50mF, since the measurement amplitude is only 300mV, so the road can be measured. (Since the non-4-wire measurements, measuring lead resistance may lead to large errors, especially small ESR measurements).
- Thyristors and Triacs can only be detected, if the test current is above the holding current. Some Thyristors and Triacs need as higher gate trigger current, than this Tester can deliver. The available testing current is only about 6mA.
- One capacitor can be detected and measured. It is shown with symbol and value to four decimal digits in the right dimension. The value can be from 25pF to 100mF. The resolution can be up to 1pF .
- Measuring of the Gate threshold voltage and Gate capacity value of MOSFETs.
- Can generate a of 1Hz-2MHz.
- For capacitors with a capacity value above 5000pF the voltage loss after a load pulse can be determined. The voltage loss give a hint for the quality factor of the capacitor. LED is detected as diode, the aux voltage is much higher than normal. Two-in-one LEDs are also detected as two diodes.
- Zener-Diodes can be detected, if reverse break down Voltage is below 4.5V. These are shown as two diodes, you can identify this part only by the voltages. The outer probe numbers, which surround the diode symbols, are identical in this case. You can identify the real Anode of the diode only by the one with break down (threshold) Voltage nearby 700mV.
Detection of the protection diode of bipolar transistors and MOSFETs.
- If more than 3 diode type parts are detected, the number of diodes is shown additionally to the fail message. This can only happen, if Diodes are attached to all three probes and at least one is -Diode. In this case you should only connect two probes and start measurement again, one after the other.
Color: As Shown.
Selectable facility to calibrate the internal port resistance of port output and the zero offset of capacity measurement with the selftest . A external capacitor with a value between 100nF and 20μF connected to pin 1 and pin 3 is necessary to compensate the offset voltage of the analog comparator. This can reduce measurement errors of capacitors of up to 40μF. With the same capacitor a correction voltage to the internal reference voltage is found to adjust the gain for ADC measuring with the internal reference.
- Measurement of the capacity value of a single diode in reverse direction. Bipolar Transistors can also be analysed, if you connect the Base and of Collector or Emitter. measurement is needed to out the connections of a bridge rectier.
- Display the Collector current ICE0 with currentless base (10μA units) and Collector residual current ICES with base hold to emitter level . This values are only shown, if they are not zero (especially for Germanium transistors).
- Software can be configured to enable series of measurements before power will be shut down.
- Can generate a fixed frequency variable pulse width wave, short key width in 1% increments, the longer the key width of 10% increments.
- Measuring of current amplication factor and Base-Emitter threshold voltage of bipolar transistors. Darlington transistors can be identified by the threshold voltage and high current amplication factor.
- Material: LCD+PCB+Electronic Component.
- Size: 10 x 8 x 1cm.

1 x Transistor Tester

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