Characteristics of the 2SD669A bipolar transistor
- Type - n-p-n
- Collector-Emitter Voltage: 160 V
- Collector-Base Voltage: 180 V
- Emitter-Base Voltage: 5 V
- Collector Current: 1.5 A
- Collector Dissipation - 20 W
- DC Current Gain (hfe) - 60 to 200
- Transition Frequency - 140 MHz
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package - TO-126