Transistor: 2N5551
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 625mW
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO-92
Transistor: 2N5401
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 625mW
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO92
Package Included:
10pcs 2N5551 NPN Transistor 160V 600 mA 0.6A TO-92 Package
10pcs 2N5401 PNP Transistor 150V 600 mA TO-92 Package