Infineon IPP072N10N3 G N-channel MOSFET Transistor, 80A, 100V, 3-pin PG-TO-220-3
You will receive 5 Transistors in an Anti Static bag, See our other items for these in larger QTY's
- Brand Infineon
- Mfr. Part No. IPP072N10N3 G
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Product Details
Infineon OptiMOS™3 Power MOSFETs, 60V and over
OptiMOS™ products are available in high performance packages to tackle the
most challenging applications giving full flexibility in limited spaces.
These
Infineon products are designed to meet and exceed the energy efficiency and
power density requirements of the sharpened next generation voltage regulation
standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology
for DC/DC converters
Qualified according to JEDEC1) for target applications
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon’s large and comprehensive portfolio of MOSFET devices includes the
OptiMOS™ and CoolMOS™ families.
These products deliver best-in-class performance
from the latest generation of state-of-the-art power MOSFETs
| Category | High Frequency Switching, Synchronous Rectification | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Single | |
| Dimensions | 10.36 x 15.95 x 4.57mm | |
| Height | 4.57mm | |
| Length | 10.36mm | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Resistance | 7.2 mΩ | |
| Maximum Drain Source Voltage | 100 V | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Maximum Power Dissipation | 150 W | |
| Minimum Operating Temperature | -55 °C | |
| Mounting Type | Through Hole | |
| Number of Elements per Chip | 1 | |
| Package Type | PG-TO-220-3 | |
| Pin Count | 3 | |
| Typical Gate Charge @ Vgs | 51 nC V @ 0 → 10 | |
| Typical Input Capacitance @ Vds | 3690 pF V @ 50 | |
| Typical Turn-Off Delay Time | 37 ns | |
| Typical Turn-On Delay Time | 19 ns | |
| Width | 15.95mm |
For a Specification PDF Please CLICK HERE
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