Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 94 W
Maximum Drain-Source Voltage 'Vds': 55 V
Maximum Gate-Source Voltage 'Vgs': 20 V
Maximum Gate-Threshold Voltage 'Vgs(th)': 4 V
Maximum Drain Current 'Id': 49 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 63(max) nC
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 360 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0175 Ohm
Package: TO220

Package Included:
20 x IRFZ44 N-Channel HEXFET Power MOSFET 49A 55V