- Advanced Process Technology

- Ultra Low On-Resistance

- Dynamic dv/dt Rating

- 175C Operating Temperature

- Fast Switching

- Ease of Paralleling

VDSS = 55V

RDS(on) = 0.040Ω

ID = 29A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed

and ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the

industry.

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 56 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 29 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 22.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TO-220

10pcs IRFZ34N 29A 55V Fast Switching Power MOSFET Transistor HEXFET