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FMUSER Original New  MRFE6VP61K25H RF Power Transistor High Power MOSFET Transistor LDMOS For 1000w FM transmitter

MRFE6VP61K25H: 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors

Overview:

These high ruggedness devices, MRFE6VP61K25H, MRFE6VP61K25HS and MRFE6VP61K25GS, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.


Features:

Unmatched Input and Output Allowing Wide Frequency Range Utilization

Device can be used Single-Ended or in a Push-Pull Configuration

Qualified Up to a Maximum of 50 VDD Operation

Characterized from 30 V to 50 V for Extended Power Range

Suitable for Linear Application with Appropriate Biasing

Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation

Characterized with Series Equivalent Large-Signal Impedance Parameters

RoHS Compliant

In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13-inch Reel.

These products are included in our product longevity program with assured supply for a minimum of 15 years after launch.

Package Include:

1*MRFE6VP61K25HRF Transistor