General Features:

 

·        Broad band UVA+UVB+UVC photodiode

·        Photovoltaic mode operation

·        TO-46 metal housing

·        Good visible blindness

·        High responsivity and low dark current

 

Applications:

 

UV index monitoring, UV radiation dose measurement, flame detection

 

Specifications:

Parameters Symbol Value Unit

Maximum ratings

Operation temperature range (Topt) : -55-200 oC
Storage temperature range (Tsto) : -55-120 oC
Soldering temperature (3 s) (Tsol) : 260 oC
Reverse voltage (Vr-max) : -20 V

 

General characteristics (25 oC)

Chip size (A) : 1 mm2
Dark current (Vr = -1 V) (Id) : <10 pA
Temperature coefficient (Tc) : 0.1 %/ oC
Capacitance (at 0 V and 1 MHz) (Cp) : 97 pF

 

Spectral response characteristics (25 oC)

Wavelength of peak responsivity (λp) : 275 nm
Peak responsivity (at 275 nm) (Rmax) : 0.097 A/W
Spectral response range (R=0.1×Rmax) : 210-350 nm
UV-visible rejection ratio (Rmax/R400 nm) : >104


Silicon Carbide (SiC):

SiC provides  the unique property of  extreme  radiation hardness, near-perfect  visible blindness,  low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffcient of signal (responsivity)  is also  low, < 0,1%/K. Because of the  low noise (dark current  in the fA range), very  low UV radiation intensities can be measured reliably. 


Spectral Response:




Package Dimension: