This Infineon Technologies AG power transistor is a single configuration N-channel MOSFET packaged in a TSOT-23-6 case with 6 pins. It has a maximum power dissipation of 2W, a drain to source voltage of 200V and a continuous drain current of 600mA. With a minimum operating temperature of -55 °C (-67 °F) and a maximum operating temperature of 150°C (302°F), it falls under the category of transistors, semiconductors and actives, and is ideal for use in electronic components and semiconductors. The IRF5801TRPBF comes in a pack of 10 pieces.