Lot 20 pcs.

Transistors GT404G germanium alloyed n-p-n amplifying low-frequency low-power.

Designed for use in the output stages of low-frequency amplifiers.

The mass of the transistor is not more than 5 grams


Characteristics of the GT404G transistor:

• Structure n-p-n;

•Maximum allowable (impulse) collector-emitter voltage 40 V;

• The maximum allowable direct (pulse) collector current is 0.5 mA;

•Maximum allowable constant power dissipation of the collector without heat sink (with heat sink) 0.6 W;

• Static current transfer coefficient of a bipolar transistor in a circuit with a common emitter 60...150;

• Collector reverse current 25 uA

• The cutoff frequency of the current transfer coefficient in a circuit with a common emitter is 1 MHz


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