Lot 20 pcs.

Transistors GT404В germanium alloy structures n-p-n amplifying.

Designed for use in the output stages of low-frequency amplifiers.

The mass of the transistor is not more than 5 grams.

Characteristics of the GT404В transistor

•N-p-n structure;

•The maximum allowable (pulse) collector-emitter voltage is 25 V;

•The maximum allowable direct (pulse) collector current 0.5 mA;

•Maximum allowable continuous collector power dissipation without heat sink (with heat sink) 0.6 W;

•Static current transfer coefficient of a bipolar transistor in a circuit with a common emitter 60...150;

•Collector reverse current 25 µA;

The cutoff frequency of the current transfer coefficient in a circuit with a common emitter of 1 MHz.

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