151-0220-00 / 2N4122 BJT Data Sheet Information
- Type of Transistor: BJT
- Type Designator:2N4122
- Material of Transistor:Si
- Polarity: PNP
- Maximum Collector Power Dissipation:0.2 W
- Maximum Collector-Base Voltage:40 V
- Maximum Collector-Emitter Voltage:40 V
- Maximum Emitter-Base Voltage:5 V
- Maximum Collector Current:0.1 A
- Maximum Operating Junction Temperature:125 °C
- Transition Frequency:450 MHz
- Forward Current Transfer Ratio (hFE Value):150
- Collector Capacitance:5 pF
- Package:TO92
More Features and Characteristics