| |
| 2N6609 and 2N3773 transistors complimentary pair, micas and insulating bush |
| |
Complementary silicon power transistors. The 2N6609 and 2N3773 power transistors are designed for high power audio, but can also be used for disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. |
| |
|
|
- High safe operating area (100% tested) 150W at 100V
- Completely characterized for linear operation
- High DC current gain and low saturation voltage
- hFE = 15 (min.) at 8A, 4V
- VCE (sat) = 1.4V (max.) at IC = 8A, IB = 0.8A
- For low distortion complementary designs y.
|
|
| |
Specifications
|
|
|
2N6609 |
2N3773 |
|
|
|
|
|
VCEO |
|
Collector-Emitter Voltage |
140V DC |
140V DC |
VCEX |
|
Collector-Emitter Voltage |
160V DC |
160V DC |
VCBO |
|
Collector-Base Voltage |
160V DC |
160V DC |
VEBO |
|
Emitter-Base Voltage |
7V DC |
7V DC |
IC |
|
Collector Current - Continuous -
Peak (Note 2) |
|
|
IB |
|
Base Current - Continuous -
Peak (Note 2) |
|
|
PD |
|
Total Power Dissipation at TA = 25°C
Derate above 25°C |
|
|
TJ, TStg |
|
Operating and Storage Junction Temperature Range |
-65 to + 200 Deg C
|
-65 to + 200 Deg C
|
|
|
|
|
|
|
|
Max. ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤10%. |
