Type Designator: BC115

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 40V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 80 MHz

Noise Figure, dB: -

Package: TO105