Charge-based Mos Transistor Modeling : The Ekv Model for Low-power And Rf Ic Design, Hardcover by Vittoz, Eric, ISBN 047085541X, ISBN-13 9780470855416, Brand New, Free shipping in the US

Pioneered by Drs. Enz, Krummenacher, and Vittoz, the EKV approach to metal-oxide semiconductor (MOS) transistor modeling was developed with the motivation of having a model that accurately predicts behavior in all regions of operation (from weak to strong inversion) in a consistent way. It does this by conserving the intrinsic source-drain symmetry of the transistor by using the substrate as the voltage reference and by introducing the concept of forward and reverse components of the drain current. The authors (both of the Swiss Center for Electronic and Microtechnology, Switzerland) of this work summarize and synthesize the current research on the EKV approach to MOS transistor modeling, emphasizing design considerations, including the properties of the device that can be used to build robust new circuits or understand existing circuits. The treatment is presented in three parts that cover the basic behavior of the generic MOS transistor, additional effects from scaling down the device dimensions, and transistors that can be used in RF circuits. Annotation ©2006 Book News, Inc., Portland, OR ()