The premium XG5-P series, maintaining the key features of the XG5 series such as NVMe revision 1.2.1, single-sided M.2 2280 form factor and low power consumption, delivers enhanced performance of up to 3000 MB/s sequential read, 2200 MB/s sequential write, 320,000 random read IOPS and 265,000 random write IOPS.

Thanks to in-house developed 64-layer, 3D flash memory BiCS FLASH and 1TB package technology, Toshiba Memory Corporation maintains a single, ultra-thin form factor for all capacities across the XG5-P and XG5 product families, and offers dimensional compatibility to platforms that need flexible storage.
 

Specifications

General
   Device Type:  Solid state drive - internal
   Capacity:  1024 GB
   Hardware Encryption:  Yes
   NAND Flash Memory Type:  3D triple-level cell (TLC)
   Form Factor:  M.2 2280
   Interface:  M.2 Card
   Features:  Read-Intensive Endurance, Enterprise, 64-layer 3D BiCS FLASH, Host Controlled Thermal Management (HCTM), Strong and highly-efficient ECC (QSBC), Storage Interface Interactions Specification(SIIS)
   Width:  0.9 in
   Depth:  3.1 in
   Height:  0.1 in
   Weight:  0.26 oz

Performance
   Internal Data Rate:  3000 MBps (read) / 2100 MBps (write)
   4KB Random Read:  320000 IOPS
   4KB Random Write:  265000 IOPS

Reliability
   MTBF:  1,500,000 hours

Expansion & Connectivity
   Interfaces:  1 x M.2 Card - M.2 Card
   Compatible Bay:  M.2 2280

Power
   Power Consumption:  4.8 Watt (read) ¦ 3.6 Watt (write)

Miscellaneous
   Compliant Standards:  ICES-003, EN55024, FCC Part 15 B, UL 60950-1, EN 60950-1, BSMI CNS 13438, CAN/CSA C22.2 No. 60950-1-07, KN32, KN35, EN 55032, AS/NZS CISPR 32

Manufacturer Warranty
   Service & Support:  Limited warranty - 5 years

Environmental Parameters
   Min Operating Temperature:  32 °F
   Max Operating Temperature:  176 °F
   Min Storage Temperature:  -40 °F
   Max Storage Temperature:  185 °F
   Humidity Range Operating:  8 - 90% (non-condensing)
   Shock Tolerance (operating):  1500 g @ 0.5 ms half-sine wave
   Shock Tolerance (non-operating):  1500 g @ 0.5 ms half-sine wave
   Vibration Tolerance (operating):  20 g @ 10-2000 Hz
   Vibration Tolerance (non-operating):  20 g @ 10-2000 Hz