Preamplification channels 1

Equivalent noise charge (ENC)* 

  ENC RMS 200 electrons 

    0.03 femtoCoul.

  Equivalent noise in silicon 1.7 keV (FWHM) 

  Equivalent noise in CdZnTe 2.4 keV (FWHM)

ENC slope 4 elect. RMS /pF 

Gain 1.4 62 volts / pC 

  62mV / MeV(Si) 

Rise time ** 7 ns 

Decay time constant 140 us 

Unsaturated output swing volts Maximum charge detectable per event 1.3 x107 electrons 

  2.1 pC

Power supply voltage (Vs)

  maximum Vs = +/- 13 volts

  minimum Vs = +/- 6 volts

Power supply current (pos) 7.5 mA

  (neg) 3.5 mA

Power dissipation 70 mW

Operating temperature -40 to +85 degC

Output offset +0.2 to -0.2 volts

Output impedance 50 ohms