Description:

FRAM is non-volatile and can easily be read/written 10 trillion times.
It's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer.
It is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source.
The FRAM chip used provides 32 KB of memory, and USES a clock up to 20 MHz.
Each byte can be read and written instantaneously, but will keep the memory for long life at normal temperature.
Specification:
Addr: 1010+A2+A1+A0
Default: 0 x 50
VCC/Logic: 2.7-5.5V
 
Package Included:

1 x FRAM Breakout Board

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